View AMG-PI004_7403727.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 1. functional description of the AMG-PI004 the AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance rds(on) for the power mosfets. the complementary h-bridge consists of 2 pmos/nmos transistor pairs. based on this trench-technology the input gate capacity is very low, so that high switching frequencies are possible thus making it ideal for use in different applications. the dfn8 package is footprint compatible with the sop8 package, making the h-bridge an ideal choice for wide spread off high efficiency applications for motor driving, lighting, and power management. 2. features ? supply voltage 5vdc...60vdc ? complementary n/p-mos h-bridge ? 60v/5.1a/ rds(on) =34m(typ) -60v/-4.2a/ rds(on) =54m (typ) ? low qg of 9.86/12.6nc for pmos/nmos low ciss of 1447pf/1378pf for pmos/nmos ? low voltage gate drive vgs = 20 v ? rohs compliant and green product ? temperature range -55c +150c ? dfn8l (5mm x 6mm x 0.75 mm) 3. application the AMG-PI004 is suitable for motor driving, lighting and power management. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 1 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 3.1. application circuit example 3.2. application notes the thermal resistance of the dfn8l package can be enhanced by using the bottom pad as heat sinks. in order to lower the thermal resistance, vias should be placed below the drain and source pads. these vias should connect to big enough heat sinks within the pcb. this will also be beneficial for the ohmic resistance of the traces. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 2 of 20 figure 1 : application circuit example. motor control 5 s1 6 7 8 s4 g1 g4 g2 g3 d1 d4 d3 s3 d2 s2 5 s1 6 7 8 s4 g1 g4 g2 g3 d1 d4 d3 s3 d2 s2 stepper motor
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets table of contents 1.functional description of the AMG-PI004 .............................................................................. 1 2.features ................................................................................................................................. 1 3.application ............................................................................................................................. 1 3.1.application circuit example ...................................................................................................... 2 3.2.application notes ..................................................................................................................... 2 4.block diagram ....................................................................................................................... 4 5.block descriptions ................................................................................................................. 4 6.pinning ................................................................................................................................... 4 7.absolute maximum ratings ................................................................................................... 5 8.electrical characteristics ........................................................................................................ 5 8.1.thermal data ............................................................................................................................ 5 8.2.n-channel electrical characteristics ........................................................................................ 5 8.3.p-channel electrical characteristics ........................................................................................ 7 9.n-channel typical characteristics .......................................................................................... 8 10.p-channel typical characteristics ...................................................................................... 13 11.ic-package ........................................................................................................................ 18 12.ordering information .......................................................................................................... 18 13.ic-marking ......................................................................................................................... 19 14.notes and cautions ........................................................................................................... 19 14.1.esd protection ..................................................................................................................... 19 14.2.storage conditions ................................................................................................................ 19 15.disclaimer .......................................................................................................................... 20 16.contact information ............................................................................................................ 20 AMG-PI004 revision: b 06.11.12 ? all rights reserved page 3 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 4. block diagram 5. block descriptions 2x pmos and 2x nmos 6. pinning pin# symbol description 1 n-source common nmos source, negative supply or gnd 2 g2 left nmos gate 3 g1 left pmos gate 4 l-drain left drain, left load connection 5 p-source common pmos source, positive supply 6 g4 right pmos gate 7 g3 right nmos gate 8 r-drain right drain, right load connection AMG-PI004 revision: b 06.11.12 ? all rights reserved page 4 of 20 5 s1 6 7 8 3 4 2 1 s4 g1 g4 g2 g3 d1 d4 d3 s3 d2 s2 figure 2 : block diagram
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 7. absolute maximum ratings the absolute maximum ratings may not be exceeded under any circumstances. # symbol parameter n-ch p-ch unit 1 v ds drain-source voltage 60 -60 v 2 i d d rain current - continuous @v gs =10v @ t c =25 5.1 -4.2 a drain current - continuous @ v gs =10v1 t c =70 4.2 -3.5 a 3 i dm pulsed drain current2 15 -12 a 4 v gs gate-source voltage 20 20 v 5 p d power dissipation 4 (t c = 25c) 2.2 2.2 w 6 t j , t stg operating and storage temperature range -55 to 150 note(s) : none 8. electrical characteristics 8.1. thermal data # symbol parameter typ max unit 1 r ja thermal resistance junction-ambient 1 - 328.15 k/w 2 r jc thermal resistance junction-case1 - 277.15 k/w 8.2. n-channel electrical characteristics t j = 25c unless otherwise noted # symbol parameter conditions min typ max unit off characteristics 1 bv dss drain-source breakdown v gs =0v , i d =250ua 60 - - v 2 bvdss / t j bvdss temperature coefficient reference to 25 , i d =1ma - 0,06 3 - v/ 3 i dss drain-source leakage current v ds =48v , v gs =0v , t j =25 - - 1 ua v ds =48v , v gs =0v , t j =55 - - 5 4 i gss gate-source leakage current v gs =20v , v ds =0v - - 100 na on characteristics 1 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1,2 - 2,5 v 2 v gs(th) v gs(th) temperature coefficient - -5.24 - mv/ AMG-PI004 revision: b 06.11.12 ? all rights reserved page 5 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets # symbol parameter conditions min typ max unit 2 r ds(on) static drain-source on- resistance2 v gs =10v , i d =5a - 34 40 m v gs =4.5v , i d =4a - 37 48 3 gfs forward transconductance vds=5v , id=4a - 28 - s dynamic characteristics 1 ci ss input capacitance v ds =15v, v gs =0v, f=1mhz - 1378 - pf 2 c oss output cap - 86 - 3 c rss reverse transfer capacitance - 64 - switching characteristics 1 r g gate resistance v ds =0v , v gs =0v , f=1mhz - 3.2 6.4 2 q g total gate charge (4.5v) v ds =48v, v gs =4.5v, i d =4a - 12.6 - nc 3 q gs gate-source charge - 3.2 - 4 q gd gate-drain charge v ds =48v, v gs =4.5v, i d =4a - 6.3 - nc 5 t d(on) turn-on delay time v dd =30v , v gs =10v r g =3.3 i d =4a - 8 - ns 6 t r rise time - 14.2 - 7 t d(off) turn-off delay time - 24.4 - 8 t f fall time - 4.6 - drain-source diode characteristics and maximum ratings 1 i s continuous source current 1,4 v g =v d =0v , force current - - 5.1 a 2 i sm pulsed source current 2,4 - - 12 a 3 v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 - - 1.2 v note(s) : 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper. 2. the data tested by pulsed, pulse width Q 300us , duty cycle Q 2% 3. the eas data shows max. rating . the test condition is v dd =25v,v gs =10v, l=0.1mh, i as =22.6a 4. the power dissipation is limited by 150 junction temperature. 5. the data is theoretically the same as i d and i dm , in real applications, should be limited by total power dissipation. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 6 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 8.3. p-channel electrical characteristics t j = 25c unless otherwise noted # symbol parameter conditions min typ max unit off characteristics 1 bv dss drain-source breakdown v gs =0v , i d =250ua -60 - - v 2 bv dss / t j bvdss temp. coefficient reference to 25 , i d =-1ma - -0.03 - v/ 3 i dss drain-source leakage current v ds =-48v , v gs =0v, t j =25 - - 1 ua v ds =-48v , v gs =0v, t j =55 - - 5 4 i gss gate-source leakage v gs =20v, v ds =0v - - 100 na on characteristics 1 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.5 - -3.0 v 2 v gs(th) vgs(th) temp. coefficient - 4.56 - mv/ 3 r ds(on) static drain-source on- resistance2 v gs =-10v , i d =-4a - 60 80 m v gs =-4.5v , i d =-3a - 73 90 4 gfs forward transconductance v ds =-5v , i d =-3a - 15 - s dynamic characteristics 1 c iss input capacitance v ds =-15v, v gs =0v, f=1mhz - 1447 - pf 2 c oss output capacitance - 97.3 - 3 c rss reverse transfer capacitance - 70 - switching characteristics 1 r g gate resistance v ds =0v, v gs =0v, f=1mhz - 21 42 2 q g total gate charge (-4.5) v ds =-48v, v gs =-4.5v, i d =-3a - 9.86 - nc 3 q gs gate-source charge - 3.08 - 4 q gd gate charge - 2.95 - 5 t d(on) turn-on delay time v dd =-15v, v gs =-10v , r g =3.3 i d =-1a - 28.8 - ns 6 t r rise time - 19.8 - 7 t d(off) turn-off delay time - 60.8 - 8 t f fall time - 7.2 - drain- diode characteristics and maximum ratings 1 i s continuous source current 1,6 v g =vd=0v, force current - - -4.2 a 2 i sm pulsed source current 2,6 - - -10.5 a 3 v sd diode forward voltage2 v gs =0v , i s -1a , t j =25 - - -1.2 v note(s) : 1. the data tested by surface mounted on a 1 inch2 fr-4 with 2oz copper. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 7 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 2. the data tested by pulse, pulse width 3. the eas data shows max. rating. the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-26.6a 4. the power dissipation is limited by 150 junction temperature. 5. the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. 9. n-channel typical characteristics AMG-PI004 revision: b 06.11.12 ? all rights reserved page 8 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 9 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 10 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 11 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 12 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 10. p-channel typical characteristics AMG-PI004 revision: b 06.11.12 ? all rights reserved page 13 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 14 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 15 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 16 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets AMG-PI004 revision: b 06.11.12 ? all rights reserved page 17 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 11. ic-package 12. ordering information AMG-PI004-idf08r (dfn8l shipment in tape & reel) AMG-PI004 revision: b 06.11.12 ? all rights reserved page 18 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 13. ic-marking ic name = pi004 date code = yyww lot number = xxyyzz 14. notes and cautions 14.1. esd protection the requirements for handling electrostatic discharge sensitive devices are described in the jedec standard jesd625-a. please note the following recommendations: ? when handling the device, operators must be grounded by wearing a for the purpose designed grounded wrist strap with at least 1m resistance and direct skin contact. ? operators must at all times wear esd protective shoes or the area should be surrounded by for esd protection intended floor mats. ? opening of the protective esd package that the device is delivered in must only occur at a properly equipped esd workbench. the tape with which the package is held together must be cut with a sharp cutting tool, never pulled or ripped off. ? any unnecessary contact with the device or any unprotected conductive points should be avoided. ? work only with qualified and grounded tools, measuring equipment, casing and workbenches. ? outside properly protected esd-areas the device or any electronic assembly that it may be part of should always be transported in egb/esd shielded packaging. 14.2. storage conditions the AMG-PI004 corresponds to moisture sensitivity classification ml2 , according to jedec standard j-std-020, and should be handled and stored according to j-std-033. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 19 of 20
AMG-PI004 h-bridge/full bridge array of p and n channel mosfets 15. disclaimer information given in this data sheet is believed to be accurate and reliable. however, no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties that may result from its use. alpha microelectronics gmbh does not authorize or warrant any of its products for use in life support system equipment. the values stated in absolute maximum ratings may under no circumstances be exceeded. no warranty is given for use in life support systems or medical equipment without the specific written consent of alpha microelectronics gmbh. for questions regarding the application please contact the publisher. the declared data are only a description of the product. they are not guaranteed properties as defined by law. examples are given without obligations and cannot give rise to any liability. reprinting of this data sheet C or any part of it C is not allowed without the license of the publisher. data sheets are subject to change without any notice. 16. contact information this data sheet is published by alpha microelectronics gmbh. to order samples or inquire information please contact: alpha microelectronics gmbh im technologiepark 1 15236 frankfurt (oder) germany am.info@alpha-microelectronics.de www.alpha-microelectronics.de +49-335-557-1750 (telephone) +49-335-557-1759 (fax) ? all rights reserved. AMG-PI004 revision: b 06.11.12 ? all rights reserved page 20 of 20

▲Up To Search▲

Price & Availability of AMG-PI004

	To Download AMG-PI004 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .